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N 2000V 800V 2A 32W TO3 [BU226]
N 2000V 800V 2A 32W TO3 [BU226]

Transistor Silicon NPN

Transistor

BU226
N 2000V 800V 2A 32W TO3
7.13 ZAR
inc
for 1 Each
14 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO3
Vbr CEO 800
Max. PD (W) 32
t(f) Max. (S) 700n
Ic Max. (A) 2.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 400m
Oper. Temp (°C) Max. 125
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 2000 V
Maximum Collector-Emitter Voltage |Vce| 800 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Forward Current Transfer Ratio (hFE), MIN 10