Catalog > Semiconductors > Discrete Semiconductors > Transistors Thransistor Thransistor IRFIZ48N SIP MOS N-CH 55V 36A 0.016R TO220 22.66 ZAR inc for 1 Each 5 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55 V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16mOhm @ 22A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 25 V Power Dissipation (Max) 42W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-FP Downloads Datasheet - IRFIZ48N PDF File 500.42 KB