Catalog > Semiconductors > Discrete Semiconductors > Transistors Bipolar Junction Transistor Bipolar Junction Transistor 2N3906 SI-P 40V 0.2A .35W 250MHz 1.43 ZAR inc for 1 Each 880 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type : Bi-polar PNP transistor Collector emitter maximum voltage : 40V Emitter base maximum voltage : 5V Collector base maximum voltage : 40V Continuous collector current : 200mA Junction operating temperature range : -55 to 150C0 Minimum forward current transfer ratio : 100 Transition frequency : 250MHz Maximum collector current : 200mA Collector Capacitance : 5pF Maximum power dissipation : 250mW Storage temperature range : -55 to 150C0 Collector emitter saturation voltage : 0.25V Dc Current gain:60 Additional Information Polarity PNP Material Silicon Power Dissipation 0.31A Downloads Datasheet - 2N3906 PDF File 149.19 KB