Catalog > Semiconductors > Discrete Semiconductors > Transistors Silicon NPN Epitaxial Planar Transistor Transistor KTC9014C N 60V 50V 150MA 60/1000 TO92 Silicon NPN Epitaxial Planar Transistor 0.60 ZAR inc for 1 Each 231 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Package: TO-92, 1-emitter, 2-base, 3-collector. Material of transistor: Si Polarity: NPN Total Devise power dissipation |PD|: 625 mW(at ambient temperature ≤ + 25 °) Collector-base breakdown voltage |VCBO|: 60V Collector-emitter breakdown voltage |VCEO|: 50V Emitter-base breakdown voltage |VEBO|: 5V Maximum collector current |Ic max|: 150mA Maximum junction temperature |Tj|: +150 °C Transition frequency (ft) : 60MHz(min.) Output Capacitance |Cob|:3,5pF Collector-emitter saturation voltage|VCE|:0,25V(IC=100mA,IB= 5mA). Forward current transfer ratio |hFE| : 60-1000,(IC=1mA,VCE=5V), 200-600(C9014C)