Catalog > Semiconductors > Discrete Semiconductors > Transistors P 60V 6A 50W 10MHZ Transistor 2SA807 P 60V 6A 50W 10MHZ 4.56 ZAR inc for 1 Each 6 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Transistor Code 2SA807 Transistor Type BJT Transistor Polarity PNP Transistor Material Silicon(SI) Package TO3 Collector Power Dissipation (Maximum) PC 50W Collector-Base Voltage (Maximum) VCB 60V Collector-Emitter Voltage (Maximum) VCE 60V Collector Current (Maximum) IC 6A Operating Junction Temperature (Maximum) TJ 175°C Emitter-Base Voltage (Maximum) VEB 6V Forward Current Transfer Ratio (hFE Value) 20 Transition Frequency FT 10MHz