1. Catalog
    2. >
  2. Semiconductors
    3. >
  3. Discrete Semiconductors
    4. >
  4. Transistors
IGBT Module - N Channel - High Reliability. High Speed Low Loss 1200A 3K3V [MBN1200E33C]
IGBT Module - N Channel - High Reliability. High Speed Low Loss 1200A 3K3V [MBN1200E33C]

IGBT N Channel Module

IGBT N Channel Module

MBN1200E33C
IGBT Module - N Channel - High Reliability. High Speed Low Loss 1200A 3K3V
6,218.70 ZAR
inc
for 1 Each
0 in Stock
Add
Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Features

  • High thermal fatigue durability. (delta Tc=70, N>30,000cycles)
  • Low noise due to ultra soft fast recovery diode.
  • High speed, low loss IGBT module.
  • Low driving power due to low input capacitance MOS gate.
  • High reliability, high durability module.
  • Isolated head sink (terminal to base

Downloads

PDF File
390.09 KB