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N 50V 30V 600MA 100MN TO92 Bipolar (BJT) NPN Transistor [MPS3704]
N 50V 30V 600MA 100MN TO92 Bipolar (BJT) NPN Transistor [MPS3704]

Bipolar (BJT) NPN Transistor

Transistor

MPS3704
N 50V 30V 600MA 100MN TO92 Bipolar (BJT) NPN Transistor
0.74 ZAR
inc
for 1 Each
1544 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 0.625 W
  • Maximum Collector-Base Voltage |Vcb|: 50 V
  • Maximum Collector-Emitter Voltage |Vce|: 30 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 0.8 A
  • Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

  • Transition Frequency (ft): 100 MHz
  • Collector Capacitance (Cc): 12 pF
  • Forward Current Transfer Ratio (hFE), MIN: 300
  • Package: TO92