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N-FET 800V 4.1A 125W <3E [IRFBE30]

Field Effect Transistor

Field Effect Transistor

IRFBE30
N-FET 800V 4.1A 125W <3E
16.96 ZAR
inc
for 1 Each
6 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Additional Information

Polarity N-Channel
Material Silicon
Power Dissipation 125A