1. Catalog
    2. >
  2. Semiconductors
    3. >
  3. Discrete Semiconductors
    4. >
  4. Transistors
N 300V 225V 100mA 20MN TO39 [BF337]
N 300V 225V 100mA 20MN TO39 [BF337]

Transistor Silicon NPN

Transistor

BF337
N 300V 225V 100mA 20MN TO39
3.98 ZAR
inc
for 1 Each
140 in Stock
Add
Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Maximum Collector Power Dissipation (Pc): 0.8 W
  • Maximum Collector-Base Voltage |Vcb|: 300 V
  • Maximum Collector-Emitter Voltage |Vce|: 225 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 0.1 A
  • Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

  • Transition Frequency (ft): 80 MHz
  • Collector Capacitance (Cc): 6 pF
  • Forward Current Transfer Ratio (hFE), MIN: 20