1. Catalog
    2. >
  2. Semiconductors
    3. >
  3. Discrete Semiconductors
    4. >
  4. Transistors
N 50V 45V 800mA 250MN X10 [BC337-40]
N 50V 45V 800mA 250MN X10 [BC337-40]

Transistor Silicon NPN

Transistor

BC337-40
N 50V 45V 800mA 250MN X10
1.05 ZAR
inc
for 1 Each
830 in Stock
Add
Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO92
Vbr CBO 50
Vbr CEO 45
Max. PD (W) 600m
C(ob) (F) 12p
Derate (Amb) (W/°C) 4.8m
hfe 630=
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 100m
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 250