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Bipolar Transistor General Purpose NPN VcBo = 100, VcE0 =60, icMax = 15A, Ptot = 100W, Hfe = 20 Ft = 1Mhz, TO3 - Metal Pkg. [BD130]
Bipolar Transistor General Purpose NPN VcBo = 100, VcE0 =60, icMax = 15A, Ptot = 100W, Hfe = 20 Ft = 1Mhz, TO3 - Metal Pkg. [BD130]

Bipolar General Purpose Transistor

Transistor

BD130
Bipolar Transistor General Purpose NPN VcBo = 100, VcE0 =60, icMax = 15A, Ptot = 100W, Hfe = 20 Ft = 1Mhz, TO3 - Metal Pkg.
0.51 ZAR
inc
for 1 Each
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Specifications

Case TO3
Vbr CBO 100
Vbr CEO 60
Max. PD (W) 100
Max. hFE 70
Min hFE 20
Ic Max. (A) 15
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 5.0m
Polarity NPN
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 1.1M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 4-30
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 20