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N 40V 30V 400MA 30KMN X10 [BC517]
N 40V 30V 400MA 30KMN X10 [BC517]

Transistor Silicon NPN

Transistor

BC517
N 40V 30V 400MA 30KMN X10
0.97 ZAR
inc
for 1 Each
0 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Maximum Collector Power Dissipation (Pc): 0.625 W
  • Maximum Collector-Base Voltage |Vcb|: 40 V
  • Maximum Collector-Emitter Voltage |Vce|: 30 V
  • Maximum Emitter-Base Voltage |Veb|: 10 V
  • Maximum Collector Current |Ic max|: 0.4 A
  • Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

  • Transition Frequency (ft): 120 MHz
  • Collector Capacitance (Cc): 5 pF
  • Forward Current Transfer Ratio (hFE), MIN: 30000
  • Package: TO92