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SIP MOS N-Channel 200V 3,3A 1,5R TO220 [IRF610]
SIP MOS N-Channel 200V 3,3A 1,5R TO220 [IRF610]

SIP MOS N 200V 3,3A 1,5R TO220

IRF610
SIP MOS N-Channel 200V 3,3A 1,5R TO220
8.98 ZAR
inc
for 1 Each
2 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 36 W
  • Maximum Drain-Source Voltage |Vds|: 200 V
  • Maximum Gate-Source Voltage |Vgs|: 20 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
  • Maximum Drain Current |Id|: 3.3 A
  • Maximum Junction Temperature (Tj): 150 °C
  • Total Gate Charge (Qg): 8.2(max) nC
  • Rise Time (tr): 17 nS
  • Drain-Source Capacitance (Cd): 53 pF
  • Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

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