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Silicon Epitaxial Planar NPN Power Transistors [BU807]
Silicon Epitaxial Planar NPN Power Transistors [BU807]

NPN Power Transistors

Transistors

BU807
Silicon Epitaxial Planar NPN Power Transistors
4.79 ZAR
inc
for 1 Each
19 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 150 V
Vce Saturation (Max) @ Ib, Ic 1.5 V @ 50 mA, 5 A
Current - Collector Cutoff (Max) 100 µA
Power - Max 60 W
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3