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N 115V 100V 6A 30MN TO220 [BD243C]
N 115V 100V 6A 30MN TO220 [BD243C]

Transistor Silicon NPN

Transistor

BD243C
N 115V 100V 6A 30MN TO220
10.55 ZAR
inc
for 1 Each
3 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO220
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 65
t(f) Max. (S) 15n
Min hFE 30
Ic Max. (A) 8.0
@Ic (test) (A) 300m
Icbo Max. @Vcb Max. (A) 400u
Polarity NPN
Tr Max. (s) 15n
R(sat) (Û) 250m
Derate Above 25°C 520m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 150
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 65 W
Maximum Collector-Base Voltage |Vcb| 115 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 30