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Bipolar (BJT) NPN Transistor [MPS2369]
Bipolar (BJT) NPN Transistor [MPS2369]

Bipolar (BJT) NPN Transistor

Transistor

MPS2369
Bipolar (BJT) NPN Transistor
1.43 ZAR
inc
for 1 Each
542 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO92
Vbr CBO 40
Vbr CEO 15
Max. PD (W) 360m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 2.8m
t(f) Max. (S) 18n+
hfe 40
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 400n
Polarity NPN
Tr Max. (s) 12n
t(stor) Max. (S) 13n
Trans. Freq (Hz) Min. 500M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 135
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 500 MHz
Forward Current Transfer Ratio (hFE), MIN 40