Catalog > Semiconductors > Discrete Semiconductors > Transistors P DAR + DI 100V 8A 40W TO-220Fa Transitor 2SB1344 P DAR + DI 100V 8A 40W TO-220Fa 4.51 ZAR inc for 1 Each 38 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Case TO220F Type Transistor Silicon PNP Manufacturer Rohm Semiconductor Vbr CEO 100 Max. PD (W) 30 Max. hFE 10k Min hFE 1k Ic Max. (A) 8 @Ic (test) (A) 2 Mat. Silicon Logic Polarity PNP @VCE (test) 3 Pinout Equivalence Number 3-15 Surface Mounted Yes/No NO Maximum Collector Power Dissipation (Pc) 30 W Maximum Collector-Base Voltage |Vcb| 120 V Maximum Collector-Emitter Voltage |Vce| 120 V Maximum Emitter-Base Voltage |Veb| 5 V Maximum Collector Current |Ic max| 8 A Max. Operating Junction Temperature (Tj) 175 °C Forward Current Transfer Ratio (hFE), MIN 10000