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N 900V 400V 8A 60MX TOP3 Isolated [BU426AF]
N 900V 400V 8A 60MX TOP3 Isolated [BU426AF]

N 900V 400V 8A 60MX TOP3 Isolated

BU426AF
N 900V 400V 8A 60MX TOP3 Isolated
10.26 ZAR
inc
for 1 Each
371 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Transistor Type: NPN Silicon Power Transistor
  • Collector‑Emitter Sustaining Voltage (V<sub>CEO(sus)</sub>): ≥ 400 V
  • Collector‑Emitter Breakdown Voltage (V<sub>CEO</sub>): ~900 V
  • Collector‑Base Voltage (V<sub>CBO</sub>): ~900 V
  • Emitter‑Base Voltage (V<sub>EBO</sub>): ~10 V
  • Continuous Collector Current (I<sub>C</sub>): ~6 A
  • Peak / Pulse Collector Current: ~10 A
  • Power Dissipation (P<sub>C</sub>): ~70 W (at 25 °C case temperature)
  • Operating Junction Temperature: −65 °C to +150 °C
  • Package: ISOWATT218 / TO‑3PML‑style high‑power package