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P 25V 1A [2SB544]
P 25V 1A [2SB544]

SI-P 25V 1A 0.9W 180MHz

Bipolar Junction Transistor

2SB544
P 25V 1A
1.93 ZAR
inc
for 1 Each
264 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Type Designator: 2SB544
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 0.9 W
  • Maximum Collector-Base Voltage |Vcb|: 25 V
  • Maximum Collector-Emitter Voltage |Vce|: 25 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 1 A
  • Operating Junction Temperature (Tj): 125 °C
  • Transition Frequency (ft): 90 MHz
  • Collector Capacitance (Cc): 50 pF
  • Forward Current Transfer Ratio (hFE), MIN: 60
  • Noise Figure, dB: -
  • Package: TO92

Additional Information

Polarity PNP
Material Silicon
Power Dissipation 0.9A