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N 400V 350V 20A 40MN TO3 [GE6060]
N 400V 350V 20A 40MN TO3 [GE6060]

N 400V 350V 20A 40MN TO3

Transistor

GE6060
N 400V 350V 20A 40MN TO3
40.41 ZAR
inc
for 1 Each
87 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Collector–Base Voltage (VCBO): 400 V
  • Collector–Emitter Voltage (VCEO): 350 V
  • Emitter–Base Voltage (VEBO): 5 V
  • Collector Current (IC): 20 A continuous
    • Peak repetitive: 25 A
    • Non-repetitive pulse: 42.5 A
  • Total Power Dissipation (PC): 125 W
  • Junction & Storage Temperature (TJ, Tstg): –65 °C to +150 °C