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NPN Silicon Bipolar Junction Transistor [2N910]
NPN Silicon Bipolar Junction Transistor [2N910]

NPN Silicon Bipolar Junction Transistor

Transistor

2N910
NPN Silicon Bipolar Junction Transistor
14.11 ZAR
inc
for 1 Each
200 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 0.5 W
  • Maximum Collector-Base Voltage |Vcb|: 100 V
  • Maximum Collector-Emitter Voltage |Vce|: 60 V
  • Maximum Emitter-Base Voltage |Veb|: 7 V
  • Maximum Collector Current |Ic max|: 0.2 A
  • Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

  • Transition Frequency (ft): 60 MHz
  • Collector Capacitance (Cc): 15 pF
  • Forward Current Transfer Ratio (hFE), MIN: 75
  • Noise Figure, dB: -
  • Package: TO18