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P 45V 45V 3A 40MN TO126 [BD132]
P 45V 45V 3A 40MN TO126 [BD132]

P 45V 45V 3A 40MN TO126

Bipolar Junction Transistor

BD132
P 45V 45V 3A 40MN TO126
6.70 ZAR
inc
for 1 Each
12 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Type Designator: BD132
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 11 W
  • Maximum Collector-Base Voltage |Vcb|: 45 V
  • Maximum Collector-Emitter Voltage |Vce|: 45 V
  • Maximum Emitter-Base Voltage |Veb|: 4 V
  • Maximum Collector Current |Ic max|: 3 A
  • Operating Junction Temperature (Tj): 125 °C
  • Transition Frequency (ft): 60 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 40
  • Noise Figure, dB: -
  • Package: TO126

Additional Information

Polarity PNP
Material Silicon
Power Dissipation 15A