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P 35V 500MA [2SA509]
P 35V 500MA [2SA509]

P 35V 500MA

35V 500MA Transistor

2SA509
P 35V 500MA
4.99 ZAR
inc
for 1 Each
66 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Type Designator: 2SA509
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 0.6 W
  • Maximum Collector-Base Voltage |Vcb|: 35 V
  • Maximum Collector-Emitter Voltage |Vce|: 30 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 0.5 A
  • Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 70 MHz
  • Collector Capacitance (Cc): 30 pF
  • Forward Current Transfer Ratio (hFE), MIN: 70
  • Noise Figure, dB: -
  • Package: TO92