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SI-N+D 1500V 8A 34W 0.7us Silicon Diffused Power Transistor [BU508DF]
SI-N+D 1500V 8A 34W 0.7us Silicon Diffused Power Transistor [BU508DF]

Silicon Diffused Power Transistor

Transistor

BU508DF
SI-N+D 1500V 8A 34W 0.7us Silicon Diffused Power Transistor
20.46 ZAR
inc
for 1 Each
17 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 34 W
  • Maximum Collector-Base Voltage |Vcb|: 1500 V
  • Maximum Collector-Emitter Voltage |Vce|: 700 V
  • Maximum Collector Current |Ic max|: 8 A
  • Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

  • Transition Frequency (ft): 7 MHz
  • Collector Capacitance (Cc): 125 pF
  • Forward Current Transfer Ratio (hFE), MIN: 10
  • Package: ISOTOP3