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P 60V 60V 1.5A 100MN TO126 Transistor [BD138-16]
P 60V 60V 1.5A 100MN TO126 Transistor [BD138-16]

Transistor Silicon NPN

Transistor

BD138-16
P 60V 60V 1.5A 100MN TO126 Transistor
1.92 ZAR
inc
for 1 Each
74 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Maximum DC Collector Current Idc 1.5A
Maximum Collector Emitter Voltage Vceo 60V
Package Type SOT-32
Mount Type Through Hole
Transistor Configuration Single
Maximum Collector Base Voltage VCBO 60V
Minimum DC Current Gain hFE 25
Maximum Emitter Base Voltage VEBO 5V
Maximum Power Dissipation Pd 1.25W
Transistor Polarity PNP
Pin Count 3
Maximum Operating Temperature 150°C
Height 27.5mm
Length 7.8mm
Width 2.9 mm