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SI-N 160V 1A 0.9W 100MHz TO92L Silicon Transistor. [2SC2383]
SI-N 160V 1A 0.9W 100MHz TO92L Silicon Transistor. [2SC2383] SI-N 160V 1A 0.9W 100MHz TO92L Silicon Transistor. [2SC2383] SI-N 160V 1A 0.9W 100MHz TO92L Silicon Transistor. [2SC2383]

Silicon Transistor

Bipolar Junction Transistor

2SC2383
SI-N 160V 1A 0.9W 100MHz TO92L Silicon Transistor.
1.31 ZAR
inc
for 1 Each
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Absolute Maximum Ratings (Ta=25°C)

  • Collector Base Voltage : 160V
  • Collector Emitter Voltage : 160V
  • Emitter Base Voltage : 6V
  • Collector Current Continuous : 1A
  • Collector Power Dissipation : 0.75W
  • Junction Temperature Range : -55°C to 150°C
  • Storage Temperature Range : -55°C to 150°C

Electrical Characteristics (TA=25°C)

  • Collector Base Breakdown Voltage : 160V
  • Collector Emitter Breakdown Voltage : 160V
  • Emitter Base Breakdown Voltage : 6V
  • Collector Cut off Current : 1µA
  • Collector Cut off Current : 10µA
  • Emitter Cut off Current : 1µA
  • Collector Emitter Saturation Voltage : 1V
  • Base Emitter ON Voltage : 0.75V
  • Transition Frequency : 20MHz

Additional Information

Polarity NPN
Material Silicon
Power Dissipation 0.9A

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