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PNP Silicon Power Darlington Transistor TO220 [MJE6040]
PNP Silicon Power Darlington Transistor TO220 [MJE6040]

Silicon PNP Transistor

Transistor

MJE6040
PNP Silicon Power Darlington Transistor TO220
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO220
Vbr CEO 60
Max. PD (W) 75
Max. hFE 20k
Min hFE 1.0k
Ic Max. (A) 8.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 20u
Mat. Silicon Logic
Polarity PNP
R(sat) (Û) 500m
Derate Above 25°C 600m
Trans. Freq (Hz) Min. 4.0M
@VCE (test) 4.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 75 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 300 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 1000