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SI-P 40V 2A 5W 100MHz [2SB891]
SI-P 40V 2A 5W 100MHz [2SB891]

Bipolar Junction Transistor

Bipolar Junction Transistor

2SB891
SI-P 40V 2A 5W 100MHz
4.07 ZAR
inc
for 1 Each
111 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Type Designator: 2SB891
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 5 W
  • Maximum Collector-Base Voltage |Vcb|: 40 V
  • Maximum Collector-Emitter Voltage |Vce|: 40 V
  • Maximum Emitter-Base Voltage |Veb|: 6 V
  • Maximum Collector Current |Ic max|: 2 A
  • Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 50 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 120
  • Noise Figure, dB: -
  • Package: TO126

Additional Information

Polarity PNP
Material Silicon
Power Dissipation 5A