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P 60V 60V 1A 40MN TO39 Transistor [BC161]
P 60V 60V 1A 40MN TO39 Transistor [BC161]

Transistor Silicon NPN

Transistor

BC161
P 60V 60V 1A 40MN TO39 Transistor
7.13 ZAR
inc
for 1 Each
26 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO39
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 3.7
Derate (Amb) (W/°C) 20m
t(f) Max. (S) 650n+
Max. hFE 400
Min hFE 40
Ic Max. (A) 1.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Tr Max. (s) 500n
R(sat) (Û) 1.0
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 175
@VCE (V) 1.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 3.2 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 40