Catalog > Semiconductors > Discrete Semiconductors > Transistors N 90V 6A 40W TO66 Transistor 2N6372 N 90V 6A 40W TO66 102.60 ZAR inc for 1 Each 91 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Mounting Style: Through Hole Package/Case: TO-66-2 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 80 V Collector- Base Voltage VCBO: 90 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1 V Pd - Power Dissipation: 40 W Gain Bandwidth Product fT: 4 MHz Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 200 C Series: 2N6372 Brand: Central Semiconductor Continuous Collector Current: 6 A DC Collector/Base Gain hFE Min: 25 at 0.5 A, 4 V DC Current Gain hFE Max: 100 at 2 A, 4 V Product Type: BJTs - Bipolar Transistors Downloads Datasheet - 2N6372 PDF File 186.41 KB