Catalog > Semiconductors > Discrete Semiconductors > Transistors P 150V 400MA Transistor 2SA766 P 150V 400MA 16.36 ZAR inc for 1 Each 36 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Case TO66 Type Transistor Silicon PNP Manufacturer Matsushita Electronics Vbr CBO 150 Vbr CEO 150 Max. PD (W) 20 Derate (Amb) (W/°C) 160m Max. hFE 150 Min hFE 30 Ic Max. (A) 1.2 @Ic (test) (A) 100m Icbo Max. @Vcb Max. (A) 30u Polarity PNP Oper. Temp (°C) Max. 140 @VCE (V) 5.0 Pinout Equivalence Number 3-14 Surface Mounted Yes/No NO Maximum Collector Power Dissipation (Pc) 20 W Maximum Collector-Base Voltage |Vcb| 150 V Maximum Emitter-Base Voltage |Veb| 5 V Maximum Collector Current |Ic max| 1.2 A Max. Operating Junction Temperature (Tj) 150 °C Transition Frequency (ft): 15 MHz Forward Current Transfer Ratio (hFE), MIN 30