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P 30V 0.1A 120MHz [2SB641]
P 30V 0.1A 120MHz [2SB641]

P 30V 0.1A 120MHz

Bipolar Junction Transistor

2SB641
P 30V 0.1A 120MHz
0.72 ZAR
inc
for 1 Each
20 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Type Designator: 2SB641
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 0.4 W
  • Maximum Collector-Base Voltage |Vcb|: 30 V
  • Maximum Collector-Emitter Voltage |Vce|: 25 V
  • Maximum Emitter-Base Voltage |Veb|: 7 V
  • Maximum Collector Current |Ic max|: 0.1 A
  • Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 150(typ) MHz
  • Collector Capacitance (Cc): 3.5 pF
  • Forward Current Transfer Ratio (hFE), MIN: 160
  • Noise Figure, dB: -
  • Package: SC71

Additional Information

Polarity PNP
Material Silicon
Power Dissipation 0.4A