Catalog > Semiconductors > Discrete Semiconductors > Transistors Transistor Silicon NPN Transistor 2N6175 N 300V 250V 1A 30MN TOP66 2.21 ZAR inc for 1 Each 8 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Case TO126 Vbr CBO 300 Vbr CEO 250 Max. PD (W) 20 Min hFE 30 Ic Max. (A) 1.0 @Ic (test) (A) 20m Icbo Max. @Vcb Max. (A) 50u Polarity NPN Derate Above 25°C 182m Trans. Freq (Hz) Min. 21M Oper. Temp (°C) Max. 135 @VCE (V) 10 Pinout Equivalence Number 3-12 Surface Mounted Yes/No NO Maximum Collector Power Dissipation (Pc) 20 W Maximum Collector-Base Voltage |Vcb| 300 V Maximum Collector-Emitter Voltage |Vce| 250 V Maximum Emitter-Base Voltage |Veb| 6 V Maximum Collector Current |Ic max| 1 A Max. Operating Junction Temperature (Tj) 130 °C Transition Frequency (ft): 21 MHz Forward Current Transfer Ratio (hFE), MIN 30