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N 30V 25V 50MA 200MN T0106 Transistor [BC113]
N 30V 25V 50MA 200MN T0106 Transistor [BC113]

Transistor Silicon NPN

Transistor

BC113
N 30V 25V 50MA 200MN T0106 Transistor
1.31 ZAR
inc
for 1 Each
18 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO106
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 200m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 2.0m
hfe 200
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 60.M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 125
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 5 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 200