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SI-P 60V 0.2A 0.5W 200MHz [2SA1318]
SI-P 60V 0.2A 0.5W 200MHz [2SA1318]

Bipolar Junction Transistor

Bipolar Junction Transistor

2SA1318
SI-P 60V 0.2A 0.5W 200MHz
1.01 ZAR
inc
for 1 Each
126 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -0.2 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 100 to 560
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92