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Si-P Dual-ra 60V 100ma 110Mhz TO-5 [BFX36]
Si-P Dual-ra 60V 100ma 110Mhz TO-5 [BFX36]

NPN Silicon Transistor

Transistor

BFX36
Si-P Dual-ra 60V 100ma 110Mhz TO-5
11.34 ZAR
inc
for 1 Each
218 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Features

  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 0.6 W
  • Maximum Collector-Base Voltage |Vcb|: 60 V
  • Maximum Collector-Emitter Voltage |Vce|: 60 V
  • Maximum Emitter-Base Voltage |Veb|: 6 V
  • Maximum Collector Current |Ic max|: 0.1 A
  • Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

  • Transition Frequency (ft): 55 MHz
  • Collector Capacitance (Cc): 5 pF
  • Forward Current Transfer Ratio (hFE), MIN: 100
  • Package: TO77