Catalog > Semiconductors > Discrete Semiconductors > Transistors P 70V 6A 30MN TOP66 Transistor 2N5955 P 70V 6A 30MN TOP66 250.80 ZAR inc for 1 Each 10 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Mounting Style: Through Hole Package/Case: TO-66-2 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 60 V Collector- Base Voltage VCBO: 70 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1 V Pd - Power Dissipation: 40 W Gain Bandwidth Product fT: 4 MHz Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 200 C Series: 2N59 Brand: Central Semiconductor Continuous Collector Current: 6 A DC Collector/Base Gain hFE Min: 20 at 3 A, 4 V DC Current Gain hFE Max: 100 at 3 A, 4 V Downloads Datasheet - 2N5955 PDF File 183.12 KB