Catalog > Semiconductors > Discrete Semiconductors > Transistors P 32V 32V 4A 63/160 TO126 32V 32V 4A 63/160 TO126 Transistor BD436 P 32V 32V 4A 63/160 TO126 3.14 ZAR inc for 1 Each 86 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type Designator: BD436 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 36 W Maximum Collector-Base Voltage |Vcb|: 32 V Maximum Collector-Emitter Voltage |Vce|: 32 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 4 A Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 3 MHz Forward Current Transfer Ratio (hFE), MIN: 50 Noise Figure, dB: - Package: TO126