Catalog > Semiconductors > Discrete Semiconductors > Transistors N-Channel MOSFET Transistor Transistor IRFBC30 N-Channel MOSFET 600V 3,6A 74W 22.52 ZAR inc for 1 Each 28 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.2Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V Power Dissipation (Max) 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB