Catalog > Semiconductors > Discrete Semiconductors > Transistors P 45V 45V 4A 750MN TO126 45V 45V 4A 750MN TO126 Transistor BD676 P 45V 45V 4A 750MN TO126 3.65 ZAR inc for 1 Each 107 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type Designator: BD676 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 40 W Maximum Collector-Base Voltage |Vcb|: 45 V Maximum Collector-Emitter Voltage |Vce|: 45 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 4 A Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 1 MHz Forward Current Transfer Ratio (hFE), MIN: 750 Noise Figure, dB: - Package: TO126