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P 30V 1A 1W 110MHZ [2SB564]
P 30V 1A 1W 110MHZ [2SB564]

P 30V 1A 1W 110MHZ

Bipolar Junction Transistor

2SB564
P 30V 1A 1W 110MHZ
0.78 ZAR
inc
for 1 Each
16 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO92L
Type Transistor Silicon PNP
Manufacturer Generic
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 800m
C(ob) (F) 36p
Derate (Amb) (W/°C) 6.4m
hfe 200
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 110M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 100m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 55 MHz
Forward Current Transfer Ratio (hFE), MIN 90