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N 80V 80V 3A 40MN TO126 Transistor [BD179]
N 80V 80V 3A 40MN TO126 Transistor [BD179]

Transistor Silicon NPN

Transistor

BD179
N 80V 80V 3A 40MN TO126 Transistor
2.26 ZAR
inc
for 1 Each
24 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 30 W
  • Maximum Collector-Base Voltage |Vcb|: 80 V
  • Maximum Collector-Emitter Voltage |Vce|: 80 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 3 A
  • Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

  • Transition Frequency (ft): 3 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 40
  • Package: TO126