Catalog > Semiconductors > Discrete Semiconductors > Transistors P 350V 300V 1A 30/120 TO39 Transistor Transistor 2N5416 P 350V 300V 1A 30/120 TO39 2.83 ZAR inc for 1 Each 521 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications RoHS: N Mounting Style: Through Hole Package/Case: TO-5-3 Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 300 V Collector- Base Voltage VCBO: 350 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 2.5 V Maximum DC Collector Current: 1 A Pd - Power Dissipation: 1 W Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 200 C Brand: Microchip Technology Continuous Collector Current: 1 A DC Collector/Base Gain hFE Min: 15 DC Current Gain hFE Max: 120 Product Type: BJTs - Bipolar Transistors Downloads Datasheet - 2N5416 PDF File 45.25 KB