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SIP MOS N-CH 600V 6A 100W 1.25R TO220 [2SK1117]
SIP MOS N-CH 600V 6A 100W 1.25R TO220 [2SK1117] SIP MOS N-CH 600V 6A 100W 1.25R TO220 [2SK1117]

Transistor N Channel MOSFET

Transistor

2SK1117
SIP MOS N-CH 600V 6A 100W 1.25R TO220
13.97 ZAR
inc
for 1 Each
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Pd - Maximum Power Dissipation: 100 W
  • |Vds|- Maximum Drain-Source Voltage: 600 V
  • |Vgs|- Maximum Gate-Source Voltage: 20 V
  • |Id| - Maximum Drain Current: 6 A
  • Tj - Maximum Junction Temperature: 150 °C

Electrical Characteristics

  • |VGSth|- Maximum Gate-Threshold Voltage: 3.5 V
  • tr - Rise Time: 25 nS
  • Coss - Output Capacitance: 250 pF
  • RDSon - Maximum Drain-Source On-State Resistance: 0.95 Ohm

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