Catalog > Semiconductors > Discrete Semiconductors > Transistors Bipolar Junction Transistor Bipolar Junction Transistor Darlington BC516 P-DARL 40V 0.4A 0.625W 2.85 ZAR inc for 1 Each 203 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type Designator: BC516 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.625 W Maximum Collector-Base Voltage |Vcb|: 40 V Maximum Collector-Emitter Voltage |Vce|: 30 V Maximum Emitter-Base Voltage |Veb|: 10 V Maximum Collector Current |Ic max|: 0.4 A Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 150 MHz Collector Capacitance (Cc): 7 pF Forward Current Transfer Ratio (hFE), MIN: 30000 Noise Figure, dB: - Package: TO92 Additional Information Polarity PNP Material Silicon Power Dissipation 0.625A