Catalog > Semiconductors > Discrete Semiconductors > Transistors SIP MOS N 200V 5A 0,8R TO220 IRF620 SIP MOS N-Channel 200V 5A 0,8R TO220 13.40 ZAR inc for 1 Each 204 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 25 V Power Dissipation (Max) 50W (Tc) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3