Catalog > Semiconductors > Discrete Semiconductors > Transistors 150V 23A 0.090Ω 136W TO220AB Transistor IRFB23N15D N-MOSFET 150V 23A 0.090Ω 136W TO220AB 41.61 ZAR inc for 1 Each 6 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Channel Type N Maximum Continuous Drain Current 23 A Maximum Drain Source Voltage 150 V Package Type TO-220AB Mounting Type Through Hole Pin Count 3 Maximum Drain Source Resistance 90 mΩ Channel Mode Enhancement Maximum Gate Threshold Voltage 5.5V Minimum Gate Threshold Voltage 3V Maximum Power Dissipation 136 W Transistor Configuration Single Maximum Gate Source Voltage -30 V, +30 V Number of Elements per Chip 1 Length 10.54mm Maximum Operating Temperature +175 °C Transistor Material Si Typical Gate Charge @ Vgs 37 nC @ 10 V Width 4.69mm Minimum Operating Temperature -55 °C Height 19.3mm Series HEXFET Downloads Datasheet - IRFB23N15D PDF File 144.68 KB