Catalog > Semiconductors > Discrete Semiconductors > Transistors N-CH 400V 5,5A TO220 IRF730 SIP MOS N-CH 400V 5,5A TO220 50/T 15.60 ZAR inc for 1 Each 12 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400 V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1Ohm @ 3A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V Power Dissipation (Max) 100W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 Downloads Datasheet - IRF730 PDF File 902.25 KB