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SI-P 300V 0.1A 0.83W [BF421]
SI-P 300V 0.1A 0.83W [BF421]

Transistor Silicon PNP

Transistor

BF421
SI-P 300V 0.1A 0.83W
0.79 ZAR
inc
for 1 Each
26667 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO92
Vbr CBO 300
Vbr CEO 300
Max. PD (W) 800m
Derate (Amb) (W/°C) 6.6m
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 10n
Polarity PNP
Trans. Freq (Hz) Min. 60M
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.83 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.025 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 1.6 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 50