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SI-P 200V 2A 35W 30MHz [2SB940]
SI-P 200V 2A 35W 30MHz [2SB940]

Transistor Silicon PNP

Transistor

2SB940
SI-P 200V 2A 35W 30MHz
3.39 ZAR
inc
for 1 Each
182 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case SOT186
Vbr CBO 200
Vbr CEO 150
Max. PD (W) 30
Derate (Amb) (W/°C) 240m
Max. hFE 260
Min hFE 60
Ic Max. (A) 2.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 180 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100